If you are looking for high-quality products, please feel free to contact us and send an inquiry, email: brad@ihpa.net

What is gallium-nitride? GAN, which is the third-generation of semiconductor materials after SIC and Diamond and the other semiconductor materials such as the first-generation GE, SI conductive materials and the second-generation GaaS, INP INP composite semiconductor substances, has been called. This material has strong radiation resistance, a large direct gap, strong atomic key and good chemical stability (almost none of the acid corrosion). This material has great potential in optoelectronics applications, as well as high-temperature and high–power microwave equipment.

Material growth of gallium-nitride
For the growth of GaN, there must be a set temperature and an appropriate NH3 partial pressur. Commonly used techniques include MOCVD (which includes APMOCVD as well as LPMOCVD), MOCVD with plasma enhancement (PE-MOCVD), MBE assisted by electron cyclotron resonance (MBE), and conventional MOCVD. As a result, both the temperature required and the NH3 partial pressurized decrease. The equipment in this project is AP MOCVD. Horizontal reactor, modified and designed specifically for this purpose. As source materials for the program, domestic high-purity TMGa, NH3 and NH3 and DeZn are used. (0001) Sapphire, (111) Silicon and (0001) silicon serve as substrates. Induction heating and low resistance silicon act as heating elements. H2 serves as a MO source carrier gas. As the regulator of the growth zone, use high-purity nitrogen2. The quality and properties of GaN were determined by double crystal difffraction, HALL measurement, and the room-temperature PL spectrum. There are two main problems to growing perfect GaN. There are two key problems to solve in order to make perfect GaN crystals. One, how to stop the strong parasitic reaction between NH3 & TMGa to allow the reactants to be fully deposited onto sapphire or Si substrates. A variety of reactor types and airflow models were used to achieve this goal. Finally, an original reactor structure was developed. GaN was created on the substrate by changing the distance between TMGa and the substrate. The silicon base acts as a heating body, which prevents the strong reaction between NH3 or graphite at high temperature. Conventional two-step growth methods are used for the second issue. A sapphire treated with high heat will create a GaN buffer at 250A0, at 550. Then it will become a perfectly formed GaN single crystal at 1050. To grow a GaN single-crystal on Si substrates, first the AlN buffer is grown at 1150, then the GaN crystal.

Galium nitride price
Price will depend on how large and pure the gallium nitride particles are. The purchase volume may also have an effect on the price. Large quantities of small amounts will result in a lower price. On our official website, you can see the price for gallium Nitride.

Gallium nitride supplier
Technology Co. Ltd., is a trustworthy and quality global manufacturer and supplier of chemicals. With more than 12 years experience, it can provide high quality chemical materials and nanotechnology products, such as gallium, nitride or graphite powder, sulfide, or 3D printing powder. You can contact us at any time to inquire about high-quality gallium nitride that is cost-effective and of good quality.

Inquiry us