GaN is a semiconductor material of third-generation with a large forbidden-band width. It has superior properties compared to first-generation Si, and second-generation GaAs.
GaN devices, due to the large band gaps and high thermal conductivity of GaN, can operate above 200 degC temperatures, allowing them to carry a higher energy density, and more reliability. A larger forbidden band and dielectric break-down electric field can reduce the on resistance of the device. This is good for improving the overall efficiency of the product.

GaN semiconductors can therefore be designed to have a higher bandwidth, a higher amplifier gain and efficiencies, as well as smaller dimensions, all in keeping with the "tonality" that is characteristic of the semiconductor industry.

GaN is the perfect material for 5G. It's also used in the power amplifiers of base stations. Gallium nitride, gallium arsenide and indium-phosphide are common semiconductor materials used in radio frequency applications.

GaN devices have better frequency characteristics compared to other high-frequency technologies such as indium phosphide and gallium arsenide. GaN devices must have a higher instantaneous bandwith. This can be achieved by using carrier aggregation, preparing higher frequency carriers and using carrier aggregation.

Gallium nitride can achieve higher power density than silicon or any other device. GaN has a higher energy density. GaN's small size is an advantage when it comes to a power level. Smaller devices can reduce device capacitance, making it easier to design higher bandwidth systems. Power Amplifiers (PA) are a critical component of the RF Circuit.

Current applications of power amplifiers are based on a combination of a gallium-arsenide (GaAs) power amplifier and a complementary metallic oxide semiconductor (CMOS) power amplifier. GaAs PA has been the mainstay, but as 5G approaches, GaAs devices may not be able to maintain high levels of integration at high frequencies.

GaN will be the next hot topic. GaN, as a wide-bandgap semiconductor, can withstand greater operating voltages. This results in higher power density. It also means a higher operating temperature.

Qualcomm President Cristiano Amon said at the Qualcomm 5G/4G Summit that the first 5G smartphones will debut during the first half and end of 2019 (Christmas and New Year). According to reports 5G technology should be up to 100 times more efficient than 4G networks. This will allow users to reach Gigabits per second and reduce latency.

As well as the increase in the number and density of basestations, there will be a significant increase in the amount of RF devices needed for the display of the base station RF Transceiver Units. As a result, in comparison with the 3G/4G eras, 5G devices will have dozens or even hundreds of times the number of RF transceiver units. Therefore, cost control and silicon-based GaN technology has a large cost advantage. It is possible to achieve the best cost-effective advantage with silicon-based GaN.

Commercialization of any new semiconductor technology is difficult, and this can be seen in the evolution of the last two generations. GaN, which is currently in this stage, will also be costing more to civilians because of the increased demand for silicon-based devices.

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